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| product specification www.jmnic.com silicon pnp power transistors 2N6296 2n6297 description ? with to-66 package ? darlington ? complement to type 2n6294/6295 applications ? for high gain amplifier and medium speed switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector fig.1 simplified outline (to-66) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N6296 60 v cbo collector-base voltage 2n6297 open emitter 80 v 2N6296 60 v ceo collector-emitter voltage 2n6298 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 8 a i b base current 80 ma p t total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.5 ?? /w jmn ic
product specification www.jmnic.com jmnic silicon pnp power transistors 2N6296 2n6297 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6296 60 v (br)ceo collector-emitter breakdown voltage 2n6297 i c =50ma ; i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =2a ;i b =8ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =40ma 3.0 v v besat base-emitter saturation voltage i c =4a ;i b =40ma 4.0 v v be base -emitter on voltage i c =2a ; v ce =3v 2.8 v i cex collector cut-off current v ce =ratedv ce ;v be(off) =1.5v t c =150 ?? 0.5 5.0 ma i ceo collector cut-off current v ce =1/2rated v ceo ; i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma h fe-1 dc current gain i c =2a ; v ce =3v 750 18000 h fe-2 dc current gain i c =4a ; v ce =3v 100 f t transition frequency i c =1.5a ; v ce =3v;f=1.0mhz 4.0 mhz c ob output capacitance i e =0 ; v cb =10v;f=0.1mhz 200 pf product specification www.jmnic.com jmnic silicon pnp power transistors 2N6296 2n6297 package outline fig.2 outline dimensions |
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